期刊
IEEE JOURNAL OF SOLID-STATE CIRCUITS
卷 39, 期 7, 页码 1148-1158出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JSSC.2004.829399
关键词
current sensing; latch delay; latch-type sense amplifier; sense amplifier; SRAM circuits; SRAM yield; yield optimization
A quantitative yield analysis of a latch-type voltage sense amplifier with a high-impedance differential input stage is presented. It investigates the impact of supply voltage, input dc level, transistor sizing, and temperature on the input offset voltage. The input dc level turns out to be most significant. Also, an analytical expression for the sensing delay is derived which shows low sensitivity on the input dc bias voltage. A figure of merit indicates that an input dc level of 0.7 V-DD is optimal regarding speed and yield. Experimental results in 130-nm CMOS technology confirm that the yield can be significantly improved by lowering the input dc voltage to about 70% of the supply voltage. Thereby, the offset standard deviation decreases from 19 to 8.5 mV without affecting the delay.
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