4.6 Article Proceedings Paper

Yield and speed optimization of a latch-type voltage sense amplifier

期刊

IEEE JOURNAL OF SOLID-STATE CIRCUITS
卷 39, 期 7, 页码 1148-1158

出版社

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JSSC.2004.829399

关键词

current sensing; latch delay; latch-type sense amplifier; sense amplifier; SRAM circuits; SRAM yield; yield optimization

向作者/读者索取更多资源

A quantitative yield analysis of a latch-type voltage sense amplifier with a high-impedance differential input stage is presented. It investigates the impact of supply voltage, input dc level, transistor sizing, and temperature on the input offset voltage. The input dc level turns out to be most significant. Also, an analytical expression for the sensing delay is derived which shows low sensitivity on the input dc bias voltage. A figure of merit indicates that an input dc level of 0.7 V-DD is optimal regarding speed and yield. Experimental results in 130-nm CMOS technology confirm that the yield can be significantly improved by lowering the input dc voltage to about 70% of the supply voltage. Thereby, the offset standard deviation decreases from 19 to 8.5 mV without affecting the delay.

作者

我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。

评论

主要评分

4.6
评分不足

次要评分

新颖性
-
重要性
-
科学严谨性
-
评价这篇论文

推荐

暂无数据
暂无数据