期刊
OPTICS COMMUNICATIONS
卷 237, 期 4-6, 页码 363-369出版社
ELSEVIER SCIENCE BV
DOI: 10.1016/j.optcom.2004.04.012
关键词
energy band structure; numerical simulation; III-V semiconductors
类别
Numerical simulation based on first-principles calculations is applied to study the structural characteristics and band-energy properties of the zincblende InxGa1-xN. The deviation parameter of the lattice constant is determined to be -0.004 Angstrom. A band gap bowing parameter of 1.890 +/- 0.097 eV is obtained with the equilibrium lattice constant and 1.857 +/- 0.093 eV is obtained with the lattice constant derived from Vegard's law. (C) 2004 Elsevier B.V. All rights reserved.
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