期刊
APPLIED SURFACE SCIENCE
卷 257, 期 11, 页码 5007-5011出版社
ELSEVIER SCIENCE BV
DOI: 10.1016/j.apsusc.2011.01.011
关键词
Pulsed laser deposition; Ge-C films; XPS analysis; X-ray diffraction
类别
资金
- Mexican National Council of Science and Technology (CONACYT) [50203-F]
Polycrystalline thin films of Ge-C were grown on Si (1 1 1) substrates by means of reactive pulsed laser deposition with methane pressure of 100 mTorr. Effect substrate temperature, T-s, on C incorporation to substitutional sites (x) in Ge1-xCx was investigated systematically by X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS) analyzes. The substrate temperatures were ranging from 250 to 400 degrees C. The substitutional C composition x in the films by XRD were estimated using the Vegard's linear law. The maximum value of x calculated by XRD was 0.032 for T-s of 350 degrees C. The position of the C Is peak at 283.4 eV in the XPS spectrum confirmed the germanium-carbon alloys. XRD measurements indicated that x increased with T-s from 250 degrees C to 350 degrees C. At T-s = 400 degrees C, the estimation of x was lowered. However, the C content calculated by XPS analyzes increased with T-s being more these values than substitutional C composition x. XPS and XRD analyzes demonstrate that the remaining C atoms are incorporated to interstitial sites. The use of the T-s plays important roles in the incorporation of substitutional C and in restraining C-cluster formation in the reactive pulsed laser deposition growth of Ge-C/Si. (C) 2011 Elsevier B.V. All rights reserved.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据