期刊
APPLIED SURFACE SCIENCE
卷 257, 期 9, 页码 4082-4090出版社
ELSEVIER SCIENCE BV
DOI: 10.1016/j.apsusc.2010.11.179
关键词
InGaAs; Sulphur passivation; Photoemission; Surface roughness; Native oxide; Ammonium sulphide; Chemical passivation
类别
资金
- MSD Focus Center
- Focus Center Research Program (FCRP)
- Semiconductor Research Corporation entity
- National Science Foundation US-Ireland [ECCS-0925844]
- IRC-SET
- Directorate For Engineering
- Div Of Electrical, Commun & Cyber Sys [0925844] Funding Source: National Science Foundation
The passivation of III-V semiconductor materials with sulphur is widely reported to reduce interface state defects and improve semiconductor device performance. The most common approach utilises ammonium sulphide ((NH4)(2)S), however there are wide variations in the reported processing parameters involved in this procedure. This study provides a comprehensive review of the various parameters used as well as determining the optimal processing conditions in terms of sample pre-treatments, temperature of the (NH4)(2)S solution, length of time the sample is in the solution and (NH4)(2)S concentration, by measuring the level of residual native oxides and surface roughness by X-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM), respectively. (C) 2010 Elsevier B. V. All rights reserved.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据