期刊
APPLIED SURFACE SCIENCE
卷 257, 期 18, 页码 7993-7996出版社
ELSEVIER
DOI: 10.1016/j.apsusc.2011.04.053
关键词
Amorphous silicon; Sputtering; Optical band gap; Mobility; Solar cell
类别
资金
- Science and Technology Committee of Shanghai [0852nm06100]
- Shanghai Talent Development Fund
- Fundamental Research Funds for the Central Universities
Amorphous silicon (a-Si) films were prepared by sputtering method with polycrystalline and monocrystalline silicon targets. Structural, optical and electrical properties of the a-Si films have been systematically studied. The deposition power is from 100 to 200 W. Compared with the a-Si films deposited by using monocrystalline silicon target, the a-Si films prepared with polycrystalline silicon target exhibit better growth property, similar optical band gap, and own the highest mobility of 1.658cm(2)/Vs, which make a good match with the optimal window of optical band gap for a-Si solar cells. The results indicated that the polycrystalline silicon target is superior to the monocrystalline silicon target when used to prepare a-Si films as the intrinsic layer in a-Si solar cells. (C) 2011 Elsevier B.V. All rights reserved.
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