4.7 Article

Defects, stress and abnormal shift of the (002) diffraction peak for Li-doped ZnO films

期刊

APPLIED SURFACE SCIENCE
卷 256, 期 24, 页码 7623-7627

出版社

ELSEVIER SCIENCE BV
DOI: 10.1016/j.apsusc.2010.06.016

关键词

ZnO; XRD; Defect; Photoluminescence; Doping

资金

  1. National Science Council of Taiwan [97-2628-M-018-001-MY3]

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The effect of changes in Li content on the structural property of sol-gel Li-doped ZnO films was investigated in this study. The observed changes of the Li incorporation-induced strain along c-axis are closely related to the different ratios between the concentrations of Li interstitials (Li-i) and Li substituting for Zn (Li-Zn) in the films. According to the observed results from X-ray diffraction (XRD) and photoluminescence measurements, we found that the domination of the dissociative mechanism in the Li-doped ZnO films led to transformation from Li-Zn to Li-i, involving the formation of Zn vacancies (V-Zn). In addition, the interaction between these defects (that is, Li-Zn, Li-i, V-Zn and oxygen vacancy) and the crystal structure may lead to the abnormal shift of the (0 0 2) diffraction peak position determined from XRD measurements. (C) 2010 Elsevier B.V. All rights reserved.

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