期刊
APPLIED SURFACE SCIENCE
卷 257, 期 3, 页码 921-924出版社
ELSEVIER SCIENCE BV
DOI: 10.1016/j.apsusc.2010.07.091
关键词
Ultraviolet photodetector; ZnO:Ga; Photoconductive detector; ZnO
类别
资金
- National Natural Science Foundation of China [50972007]
- Beijing Municipal Natural Science Foundation [4092035]
- Foundation of Beijing Jiaotong University [2006XZ008]
- Beijing Municipal Commission of Education
- National Science Fund for Distinguished Young Scholars [60825407]
A metal-semiconductor-metal photoconductive detector was fabricated on c-axis preferred oriented Ga-doped ZnO (ZnO:Ga) thin film prepared on quartz by radio-frequency magnetron sputtering. With a 10V bias, a responsivity of about 2.6A/W at 370nm was obtained in the ultraviolet region. The photocurrent increases linearly with incident power density for more than two orders of magnitude. The transient response measurement revealed photoresponse with a rise time of 10 ns and a fall time of 960 ns, respectively. The results are much faster than those reported in photoconductive detectors based on unintentionally doped n-type ZnO films. (C) 2010 Elsevier B.V. All rights reserved.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据