期刊
APPLIED SURFACE SCIENCE
卷 256, 期 13, 页码 4121-4124出版社
ELSEVIER SCIENCE BV
DOI: 10.1016/j.apsusc.2010.01.094
关键词
CuCrO2 film; Electronic properties; Optical properties
类别
资金
- Beijing Education Committee [KM200910005023]
- Excellent Persons in Science and Engineering of Beijing [20061D0501500199]
N-doped CuCrO2 thin films were prepared by using radio frequency magnetron sputtering technique. The XRD and XPS measurements were used to confirm the existence of the N acceptors in CuCrO2 thin films. Hall measurements show the p-type conduction for all films. The electrical conductivity increases rapidly with the increase in N doping concentration, and the maximum of the electrical conductivity of 17 S cm (1) is achieved for the film deposited with 30 vol.% N2O, which is about three orders of magnitude higher than that of the undoped CuCrO2 thin film. Upon increasing the doping concentrations the band gaps of N-doped CuCrO2 thin films increase due to the Burstein-Moss shift. (C) 2010 Elsevier B.V. All rights reserved.
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