Highly reliable GaN-based light-emitting diodes formed by p-In0.1Ga0.9N-ITO structure

Indium-tin-oxide (ITO) is deposited as a transparent current spreading layer of GaN-based light-emitting diodes (LEDs). To reduce the interfacial Schottky barrier height, a thin p-In0.1Ga0.9N layer is grown as an intermediate between ITO And p-GaN. The contact resistivity around 2.6 x 10(-2) Omega . cm(2) results in a moderately high forward voltage LED of 3.43 V operated at 20 mA. However, the external quantum efficiency and power efficiency are enhanced by 46% and 36%, respectively, in comparison with the conventional Ni-Au contact LEDs. In the life test, the power degradation of the p-In0.1Ga0.9N-ITO contact samples also exhibits a lower value than that of the conventional ones.