期刊
APPLIED SURFACE SCIENCE
卷 257, 期 2, 页码 553-557出版社
ELSEVIER SCIENCE BV
DOI: 10.1016/j.apsusc.2010.07.032
关键词
Copper alloy films; Barrierless metallization; Insoluble substances
类别
资金
- National Science Council, ROC (Taiwan) [96-2216-E-243-001-CC3, 97-2216-E-243-001-CC3]
In this study, we observe useful properties of V(1.1)- and V(0.8)N(0.4)-bearing copper (Cu) films deposited on barrierless silicon (Si) substrates by a cosputtering process. The Cu(98.8)(V(0.8)N(0.4)), or Cu(VN(x)) for brevity, films exhibit low resistivity (2.9 mu Omega cm) and minimal leakage current after annealing at temperatures up to 700 degrees C for 1 h; no detectable reaction occurs at the Cu/Si interface. These observations confirm the high thermal stability of Cu(VN(x)) films. Furthermore, since these films have good adhesion features, they can be used for barrierless Cu metallization. (C) 2010 Elsevier B. V. All rights reserved.
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