期刊
APPLIED SURFACE SCIENCE
卷 256, 期 21, 页码 6219-6223出版社
ELSEVIER
DOI: 10.1016/j.apsusc.2010.03.144
关键词
Continuous composition spread; Transparent conducting oxides; Ga doped ZnO; Thin film
类别
资金
- Ministry of Knowledge Economy [10030068]
- Ministry of Education, Science and Technology, Republic of Korea [2009-0082023]
- Korea Evaluation Institute of Industrial Technology (KEIT) [10030068] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
- National Research Foundation of Korea [2009-0082023] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
Ga doped ZnO (GZO) thin films were deposited on glass substrates at room temperature by continuous composition spread (CCS) method. CCS is thin films growth method of various GaxZn1-xO(GZO) thin film compositions on a substrate, and evaluating critical properties as a function position, which is directly related to material composition. Various compositions of Ga doped ZnO deposited at room temperature were explored to find excellent electrical and optical properties. Optimized GZO thin films with a low resistivity of 1.46 x 10(-3) Omega cm and an average transmittance above 90% in the 550nm wavelength region were able to be formed at an Ar pressure of 2.66 Pa and a room temperature. Also, optimized composition of the GZO thin film which had the lowest resistivity and high transmittance was found at 0.8 wt.% Ga2O3 doped in ZnO. (C) 2010 Elsevier B.V. All rights reserved.
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