期刊
APPLIED SURFACE SCIENCE
卷 255, 期 21, 页码 8855-8859出版社
ELSEVIER
DOI: 10.1016/j.apsusc.2009.06.076
关键词
Ga-doped ZnO thin films; Seebeck effect; Magnetoresistive effect; Magnetron sputtering
类别
资金
- New Century Excellent Talents in University [NCET-05-0764]
- Natural Science Foundation of Chongqing [CSTC2007BB4137]
- Graduate Innovation Foundation [200904A1 B0010314]
- Third Stage of 211 Innovative Talent Training Project of Chongqing University [S-09109]
In this paper, Ga-doped ZnO (GZO) films were deposited on glass substrates at different substrate temperatures by RF magnetron sputtering. The effect of substrate temperature on the structural, surface morphological properties, Seebeck and magnetoresistive effects of GZO films was investigated. It is found that the GZO films are polycrystalline and preferentially in the [002] orientation, and the film deposited at 300 degrees C has an optimal crystal quality. Seebeck and magnetoresistive effects are apparently observed in GZO films. The thermoelectromotive forces are negative. Decreasing substrate temperature and annealing in N-2 flow can decrease carrier concentration. The absolute value of the Seebeck coefficient increases with decreasing carrier concentration. The maximal absolute value of Seebeck coefficient is 101.54 mu V/K for the annealed samples deposited at the substrate temperature of 200 degrees C. The transverse magnetoresistance of GZO films is related to both the magnetic field intensity and the Hall mobility. The magnetoresistance increases almost linearly with magnetic field intensity, and the films deposited at higher substrate temperature have a stronger magnetoresistance under the same magnetic field, due to the larger Hall mobility. (C) 2009 Elsevier B.V. All rights reserved.
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