期刊
APPLIED SURFACE SCIENCE
卷 255, 期 8, 页码 4452-4455出版社
ELSEVIER SCIENCE BV
DOI: 10.1016/j.apsusc.2008.11.042
关键词
Quantum rings; Molecular beam epitaxy; Annealing; Atomic force microscopy
类别
资金
- Natural Science Foundation of Tianjin [08JCYBJC14800]
- National Natural Science Foundation of China [60476042, 60506013, 20772090]
- The National High Technology Research and Development Program of China [2006AA03Z413]
InAs quantum dots (QDs) were grown by molecular beam epitaxy in the Stranski-Krastanow growth mode. The samples were placed between two undoped GaAs slices and annealed in nitrogen ambient at different temperature. Effect of annealing temperature on the evolution of QDs morphology is investigated by the AFM. This behavior can be attributed to the mechanisms of QDs ripening, intermixing and segregation in the annealing process. A number of QDs have evoluted into the uniform distribution quantum rings (QRs) when the sample was annealed at the temperature of 800 degrees C. The results indicated that high density and uniform QRs can be obtained by the post-growth technique. Crown Copyright (C) 2008 Published by Elsevier B. V. All rights reserved.
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