期刊
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS
卷 43, 期 8A, 页码 L1029-L1031出版社
JAPAN SOC APPLIED PHYSICS
DOI: 10.1143/JJAP.43.L1029
关键词
valence band; MBE; GaAs; GaN; X-ray photoemission spectroscopy; electronic structure; LDA calculation
The electronic structures of molecular beam epitaxy (MBE)-grown GaAs and GaN have been studied by means of a technique using a newly developed surface-insensitive probe, namely, high-resolution hard X-ray (HX) synchrotron radiation (hv = 5.95 keV) photoemission spectroscopy (PES). The obtained valence band spectra and shallow core electronic states are compared with those calculated by the full-potential local density approximation (LDA) calculations explicitly including the Ga 3d core state. The experimental valence band spectra show a very good match with the calculations, simulated with linear combinations of the partial density of states. The Ga 3d core on d core states in GaN indicates a set of fine structures which are attributed to the Ga 3d-N 2s hybridization effect. The present experiments indicate that HX-PES provides an indispensable probe for investigating valence band electronic structures of materials, which has so far been impossible due to the limitations of proper surface preparation methods.
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