4.7 Article

Effects of surface roughness on the electrical characteristics of ZnO nanowire field effect transistors

期刊

APPLIED SURFACE SCIENCE
卷 254, 期 23, 页码 7559-7564

出版社

ELSEVIER
DOI: 10.1016/j.apsusc.2008.01.070

关键词

surface roughness; passivation; ZnO; nanowire; field effect transistor

资金

  1. Ministry of Science and Technology of Korea
  2. National Research Foundation of Korea [2008-06696] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)

向作者/读者索取更多资源

We have systematically investigated the effects of surface roughness on the electrical characteristics of ZnO nanowire field effect transistors (FETs) before and after passivation by poly (methyl metahacrylate) (PMMA), a polymer-insulating layer. To control the surface morphology of ZnO nanowires, ZnO nanowires were grown by the vapor transport method on two different substrates, namely, an Au-catalyzed sapphire and an Au-catalyzed ZnO film/sapphire. ZnO nanowires grown on the Au-catalyzed sapphire substrate had smooth surfaces, whereas those grown on the Au-catalyzed ZnO film had rough surfaces. Electrical characteristics such as the threshold voltage shift and transconductance before and after passivation were strongly affected by the surface morphology of ZnO nanowires. (c) 2008 Elsevier B.V. All rights reserved.

作者

我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。

评论

主要评分

4.7
评分不足

次要评分

新颖性
-
重要性
-
科学严谨性
-
评价这篇论文

推荐

暂无数据
暂无数据