Properties of Dy-doped ZnO nanocrystalline thin films prepared by pulsed laser deposition

Highly transparent conductive Dy2O3 doped zinc oxide (ZnO)(1-x)(Dy2O3)(x) nanocrystalline thin films with x from 0.5% to 5% have been deposited on glass substrate by pulsed laser deposition technique. The structural, electrical and optical properties of Dy2O3 doped thin films were investigated as a function of the x value. The experimental results show that the Dy concentration in Dy-doped ZnO thin films has a strong influence on the material properties especially electrical properties. The resistivity decreased to a minimum value of 5.02 x 10(-4) Omega cm with x increasing from 0.5% to 1.0%, then significantly increased with the further increasing of x value. On the contrary, the optical direct band gap of the (ZnO)(1-x)(Dy2O3)(x) films first increased, then decreased with x increasing. The average transmission of Dy2O3 doped zinc oxide films in the visible range is above 90%. (C) 2007 Elsevier B.V. All rights reserved.