期刊
APPLIED SURFACE SCIENCE
卷 254, 期 19, 页码 6252-6256出版社
ELSEVIER SCIENCE BV
DOI: 10.1016/j.apsusc.2008.02.161
关键词
transport properties; silicon; nanodeice; dopant; hopping; coulomb blockade
We investigate the hole transport in p-channel field-effect transistors doped with boron, at low temperatures (6 - 28 K). In transistors with a relatively large dimension, we observe the acceptor-mediated hopping and carrier freezeout, both of which are strongly influenced by the gate bias. In nanoscale transistors, these features turn into single-charge tunneling, i.e., the trapping/detrapping of single holes by/from individual acceptors. The statistics of the appearance of the modulation in a few ten samples indicates that the number of acceptors is small, or even just one, indicating that what we have observed is single-charge-transistor operation by a single-acceptor quantum dot. (C) 2008 Elsevier B. V. All rights reserved.
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