期刊
APPLIED SURFACE SCIENCE
卷 255, 期 3, 页码 787-789出版社
ELSEVIER SCIENCE BV
DOI: 10.1016/j.apsusc.2008.07.028
关键词
Silicon; Si/SiO(2) interface; Optical properties; Multi-quantum wells; Nanostructure
Using first-principles calculations we investigate the influence of interface modi. cation and layer thicknesses on the optical properties of Si/SiO(2) superlattices. Four interface models with different dangling-bond passivation are considered. The results demonstrate confinement effects not only for the fundamental band gaps but also for the optical properties. While for a large Si layer thickness of the Si/SiO(2) superlattices the interface dependence is small, the calculations show a significant structure dependence for thin Si layers. (C) 2007 Elsevier Science. All rights reserved. (C) 2008 Elsevier B. V. All rights reserved.
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