期刊
APPLIED SURFACE SCIENCE
卷 255, 期 1, 页码 75-77出版社
ELSEVIER
DOI: 10.1016/j.apsusc.2008.05.167
关键词
silicon waveguide; SOI; PAS
The structure of re-crystallized silicon films is investigated using transmission electron microscopy, spectroscopic ellipsometry and positron annihilation spectroscopy. Samples were prepared via amorphization of the silicon overlayer of silicon-on-insulator substrates, and subsequent thermal annealing. For an annealing temperature of 650 degrees C we show that the silicon film has a poly-crystalline structure. Its refractive index measured at 1550 nm is comparable to that of crystalline silicon following re-crystallization at 750 degrees C. Positron measurements indicate a high concentration of open-volume point defects in the re-crystallized films. We discuss the potential importance of these structures with regard to defect engineering for silicon photonic devices. (C) 2008 Elsevier B.V. All rights reserved.
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