期刊
APPLIED SURFACE SCIENCE
卷 254, 期 22, 页码 7219-7222出版社
ELSEVIER SCIENCE BV
DOI: 10.1016/j.apsusc.2008.05.269
关键词
nanostructures; silicon nanowires; electroless etching
Highly oriented silicon nanowire (SiNW) layer was fabricated by etching Si substrate in HF/(AgNO(3) + Na(2)S(2)O(8)) solution at 50 degrees C. The morphology and the photoluminescence (PL) of the etched layer as a function of Na(2)S(2)O(8) concentration were studied. The SiNW layers formed on silicon were investigated by scanning electron microscopy (SEM) and energy-dispersive X-ray (EDX). It was demonstrated that the morphology of the etched layers depends on the Na(2)S(2)O(8) concentration. Room-temperature photoluminescence (PL) from etched layer was observed. It was found that the utilisation of Na(2)S(2)O(8) decreases PL peak intensity. Finally, a discussion on the formation process of the silicon nanowires is presented. (C) 2008 Elsevier B.V. All rights reserved.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据