期刊
SURFACE REVIEW AND LETTERS
卷 11, 期 4-5, 页码 373-378出版社
WORLD SCIENTIFIC PUBL CO PTE LTD
DOI: 10.1142/S0218625X04006311
关键词
low dimensional structures; nanowires; growth models; SiC
A simple, direct synthesis method was used to grow the core-shell SiC-SiOx nanowires by heating the NiO catalyzed silicon substrate. The carbothermal reduction of WO3 by C provided a reductive environment to synthesize the crystalline SiC nanowires covered with the SiOx sheath in the growth temperature of 1000-1100degreesC. After hydrofluoric acid (HF) etching, the cubic beta-SiC nanowires were extracted from the core-shell nanowires in large quantities. A solid-liquid-solid (SLS) mechanism was proposed for the growth of the core-shell SiC-SiOx nanowires.
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