期刊
APPLIED SURFACE SCIENCE
卷 254, 期 20, 页码 6637-6641出版社
ELSEVIER
DOI: 10.1016/j.apsusc.2008.04.048
关键词
nanostructures; chemical vapor deposition processes; semiconducting III-Vmaterials
Quasi-horizontal GaN nanowire array network has been grown on Au-film-coated MgO substrates via a sublimation sandwich technique. These GaN nanowire arrays principally grew along two directions which were perpendicular to each other and nearly parallel to the substrate, forming a regular network. The formation of the nanowire network was a hetero-epitaxial vapor -liquid -solid (VLS) process assisted by Au catalysts and was dependent on the substrates. Transmission electron microscopy revealed that the nanowires were single-crystalline wurtzite GaN. Raman scattering spectrum of the nanowire network presented some new features. (C) 2008 Elsevier B.V. All rights reserved.
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