10-kV 123-mΩ.cm2 4h-sic Power DMOSFETS

10 kV, 123 mOmega(.)cm(2) Power DMOSFETs in 4H-SiC are demonstrated. A 42% reduction in R-on,R-sp, compared to a previously reported value, was achieved by using an 8 x 10(14) cm(-3) doped, 85-mum-thick drift epilayer. An effective channel mobility of 22 cm(2)/Vs was measured from a test MOSFET. A specific on-resistance of 123 mOmega(.)cm(2) were measured with a gate bias of 18 V, which corresponds to an E-ox of 3 MV/cm. A leakage current of 197 muA was measured at a drain bias of 10 kV from a 4H-SiC DMOSFET with an active area of 4.24 x 10(-3) cm(2). A switching time of 100 ns was measured in 4.6-kV, 1.3-A switching measurements. This shows that the 4H-SiC power DMOSFETS are ideal for high-voltage, high-speed switching applications.