期刊
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS
卷 43, 期 8A, 页码 L1035-L1037出版社
JAPAN SOC APPLIED PHYSICS
DOI: 10.1143/JJAP.43.L1035
关键词
UV LED; MOW; micro-LED; AlGaN; buffer; strain relief
We report on AlGaN based deep ultraviolet (UV) light emitting diodes (LED) with a novel micro-pixel design and emission at 254 nm. The micro-pixel design was adopted to improve the lateral current spreading and to reduce the operation voltages. For a 4 x 4 and 10 x 10 interconnected 30 mum diameter micro-pixel design, the device series resistances as low as 17 Omega and 11 Omega were measured. For an unpackaged 10 x 10 pixel design LED, pulsed output power as high as 1 mW was measured at a pump current of 1 A which translates to a peak external quantum efficiency of 0.02%.
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