期刊
NANOTECHNOLOGY
卷 15, 期 8, 页码 918-922出版社
IOP PUBLISHING LTD
DOI: 10.1088/0957-4484/15/8/008
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InP and GaP nanowires have been synthesized from an Ullmann-like reaction of elemental indium and gallium with triphenyl phosphine at about 350-400degreesC for 8 h. The as-prepared samples have been structurally characterized by powder x-ray diffractometer (XRD), x-ray photoelectron spectroscopy (XPS), transmission electron microscopy (TEM), high-resolution TEM, energy dispersive x-ray spectroscopy (EDS), GCT-MS, FTIR and H-1-NMR. XRD, electron diffraction patterns and HRTEM images show that the nanowires have the zinc blende structure based on a vapour-liquid-solid growth mechanism.
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