We have investigated the electronic properties of the CuGaSe2/In2S3 heterointerface by photoelectron spectroscopy. In2S3 was evaporated by physical vapor deposition onto contamination free polycrystalline CuGaSe2 surface prepared by the selenium decapping process. A valence band offset DeltaE(VB)=0.78+/-0.1 has been determined. (C) 2004 American Institute of Physics.
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