Paramagnetic defects of silicon nanowires

The paramagnetic defects in and on Si nanowires (SiNWs) obtained by oxide-assisted growth were studied by conventional electron spin resonance spectroscopy. For the as-grown nanowires, three different defects were found: Dangling bonds or P-b-centers with g=2.0065, located at the interface of the crystalline core to the surrounding oxide, E-'-centers with g=2.0005 and EX-centers with g=2.00252, located in the oxide. For the EX-centers, the characteristic hyperfine lines separated by 16.4 G were detected. The as-grown SiNWs showed a spin density of about 10(18) cm(-3). H termination of the nanowires via hydrofluoric acid decreases the spin density drastically to 3x10(16) cm(-3). The optical absorption spectra of SiNWs determined by photothermal deflection spectroscopy are comparable to those of microcrystalline silicon and show a similar decrease of defect density upon H termination. (C) 2004 American Institute of Physics.