Zn1-xCdxO film growth using remote plasma-enhanced metalorganic chemical vapor deposition

Zn1-xCdxO films were successfully grown by remote plasma-enhanced metalorganic chemical vapor deposition (RPE-MOCVD). The content ratio of Zn1-xCdO films was controlled by changing the molar ratio of diethyl zinc (DEZn) to dimethyl cadmium (DMCd). The wurtzite structure of Zh(1-x)Cd(x)O films was obtained by increasing the Cd content up to x = 0.697. The optical-band-gap energy of Zn1-xCdxO films was tuned between 1.85 eV and 3.28 eV at room temperature. The photoluminescence emission of hexagonal Zn1-xCdxO films up to x = 0.697 was observed at room temperature.