Optical and electrical transport properties in silicon carbide nanowires

We report on the optical and electrical transport properties of single-crystalline silicon carbide nanowires (SiC NWs). The NWs were fabricated by a chemical vapor deposition process, and had diameters of <100 nm and lengths of several mum. X-ray diffraction and transmission electron microscopy analysis showed the single-crystalline nature of NWs with a growth direction of <111>. Photoluminescence characterization showed blue emission at room temperature. The electrical measurements from a field effect transistor structure on individual NWs showed n-type semiconductor characteristics. The resistivity and estimated electron mobility on the NWs are 2.2x10(-2) Omega cm for 0 V of gate voltage and 15 cm(2)/(V s), respectively. Our low-resistivity SiC NWs could be applied to a high-temperature operation sensor and actuator due to its own excellent electrical and optical properties. (C) 2004 American Institute of Physics.