期刊
ELECTRONICS LETTERS
卷 40, 期 17, 页码 1082-1083出版社
INST ENGINEERING TECHNOLOGY-IET
DOI: 10.1049/el:20045206
关键词
-
A novel quantum dot infrared photodetector design, based on double-barrier resonant tunnelling, is proposed and demonstrated. Theoretical calculations predict significantly lower dark currents in this device, compared to conventional quantum dot photodetectors. This is home out of experimental results.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据