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Amorphouslike density of gap states in single-crystal pentacene

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PHYSICAL REVIEW LETTERS
卷 93, 期 8, 页码 -

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AMERICAN PHYSICAL SOC
DOI: 10.1103/PhysRevLett.93.086802

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We show that optical and electrical measurements on pentacene single crystals can be used to extract the density of states in the highest occupied molecular orbital-lowest unoccupied molecular orbital band gap. It is found that these highly purified crystals possess band tails broader than those typically observed in inorganic amorphous solids. Results on field-effect transistors fabricated from similar crystals imply that the gap state density is much larger within 5-10 nm of the gate dielectric. Thus, organic thin-film transistors for such applications as flexible displays might be significantly improved by reducing these defects.

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