期刊
IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY
卷 4, 期 3, 页码 301-305出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TDMR.2004.837117
关键词
flash EEPROM; scaling
The physical and electrical scaling challenges for ETox(TM) Flash memory, including reliability considerations, will be reviewed with potential directions for solutions identified. As Flash scales into the sub-100-nm regime, challenges arise due to the high voltage/field requirement of the programming and erase mechanisms and the stringent charge storage requirement of the dielectrics. These challenges will be overcome with innovations in new materials, new cell structures, and memory error management. Using these techniques will extend the viability of Flash memory to at least the 45-nm generation.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据