期刊
APPLIED PHYSICS LETTERS
卷 104, 期 6, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.4864757
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资金
- National Basic Research Program of China [2012CB933101]
- National Natural Science Foundation of China [11034004, 11374131, 11104123, 51202102]
- Program for Changjiang Scholars and Innovative Research Team in University [IRT1251]
- Fundamental Research Funds for Central Universities [lzujbky-2012-31, 2022013zrct01, 2022013zr001]
A gate-controllable in-plane magnetic anisotropy with C-2v symmetry was observed in a Ni0.46Zn0.54Fe2O4/Pb(Mg1/3Nb2/3)O-3-PbTiO3 heterostructure. Detailed amplitude analysis reveals a linearly electric modulation in anisotropy energy that arises from a strain-mediated magnetoelectric coupling across the interface. In particular, an electrically-driven rotational in-plane magnetic easy axis and anisotropic-isotropic transition in NiZn ferrite film, respectively, enable possibilities for magnetization control in multiferroic devices. (C) 2014 AIP Publishing LLC.
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