相关参考文献
注意：仅列出部分参考文献，下载原文获取全部文献信息。Towards forming-free resistive switching in oxygen engineered HfO2-x
S. U. Sharath et al.
APPLIED PHYSICS LETTERS (2014)
Area and Thickness Scaling of Forming Voltage of Resistive Switching Memories
An Chen
IEEE ELECTRON DEVICE LETTERS (2014)
Optimal stoichiometry for nucleation and growth of conductive filaments in HfOx
K. P. McKenna
MODELLING AND SIMULATION IN MATERIALS SCIENCE AND ENGINEERING (2014)
Forming-free bipolar memristive switching of ZnO films deposited by cyclic-voltammetry
Jian-Shiou Huang et al.
ELECTROCHIMICA ACTA (2013)
Structural properties and electroforming-free resistive switching characteristics of GdOx, TbOx, and HoOx memory devices
Tung-Ming Pan et al.
MATERIALS CHEMISTRY AND PHYSICS (2013)
Characterization of electroforming-free titanium dioxide memristors
John Paul Strachan et al.
BEILSTEIN JOURNAL OF NANOTECHNOLOGY (2013)
Atomic layer deposition of thin oxide films for resistive switching
K. Froehlich et al.
ATOMIC LAYER DEPOSITION APPLICATIONS 9 (2013)
Semiconducting-like filament formation in TiN/HfO2/TiN resistive switching random access memories
F. De Stefano et al.
APPLIED PHYSICS LETTERS (2012)
Physical properties and band structure of reactive molecular beam epitaxy grown oxygen engineered HfO2±x
Erwin Hildebrandt et al.
JOURNAL OF APPLIED PHYSICS (2012)
Transport properties of oxygen vacancy filaments in metal/crystalline or amorphous HfO2/metal structures
Xavier Cartoixa et al.
PHYSICAL REVIEW B (2012)
Controlled oxygen vacancy induced p-type conductivity in HfO2-x thin films
Erwin Hildebrandt et al.
APPLIED PHYSICS LETTERS (2011)
Roles and Effects of TiN and Pt Electrodes in Resistive-Switching HfO2 Systems
L. Goux et al.
ELECTROCHEMICAL AND SOLID STATE LETTERS (2011)
HfOx/TiOx/HfOx/TiOx Multilayer-Based Forming-Free RRAM Devices With Excellent Uniformity
Z. Fang et al.
IEEE ELECTRON DEVICE LETTERS (2011)
Impact of Temperature on the Resistive Switching Behavior of Embedded HfO2-Based RRAM Devices
Christian Walczyk et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2011)
Resistive switching characteristics of CMOS embedded HfO2-based 1T1R cells
D. Walczyk et al.
MICROELECTRONIC ENGINEERING (2011)
Low-Power and Nanosecond Switching in Robust Hafnium Oxide Resistive Memory With a Thin Ti Cap
H. Y. Lee et al.
IEEE ELECTRON DEVICE LETTERS (2010)
An Ultrathin Forming-Free HfOx Resistance Memory With Excellent Electrical Performance
Yu-Sheng Chen et al.
IEEE ELECTRON DEVICE LETTERS (2010)
Low-Temperature-Grown Transition Metal Oxide Based Storage Materials and Oxide Transistors for High-Density Non-volatile Memory
Myoung-Jae Lee et al.
ADVANCED FUNCTIONAL MATERIALS (2009)
Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges
Rainer Waser et al.
ADVANCED MATERIALS (2009)
Pulse-induced low-power resistive switching in HfO2 metal-insulator-metal diodes for nonvolatile memory applications
Ch. Walczyk et al.
JOURNAL OF APPLIED PHYSICS (2009)
Hafnium oxide thin films: Effect of growth parameters on oxygen and hafnium vacancies
E. Hildebrandt et al.
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B (2009)
The mechanism of electroforming of metal oxide memristive switches
J. Joshua Yang et al.
NANOTECHNOLOGY (2009)
Performance improvement of CuOx with gradual oxygen concentration for nonvolatile memory application
P. Zhou et al.
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B (2008)
Nanoionics-based resistive switching memories
RaineR Waser et al.
NATURE MATERIALS (2007)
分享论文
