Transient lateral photovoltaic effect in patterned metal-oxide-semiconductor films

The time dependent transient lateral photovoltaic effect has been studied with mu s time resolution and with chopping frequencies in the kHz range, in lithographically patterned 21nm thick, 5, 10, and 20 mu m wide, and 1500 mu m long Co lines grown over naturally passivated p-type Si (100). We have observed a nearly linear dependence of the transitorial response with the laser spot position. A transitorial response with a sign change in the laser-off stage has been corroborated by numerical simulations. A qualitative explanation suggests a modification of the drift-diffusion model by including the influence of a local inductance. Our findings indicate that the microstructuring of position sensitive detectors could improve their space-time resolution. (C) 2014 AIP Publishing LLC.