期刊
APPLIED PHYSICS LETTERS
卷 105, 期 5, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.4892302
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资金
- NSF [EPS-1003970]
- Arkansas Bioscience Institute
- Arktonics, LLC (Air Force SBIR) [FA9550-14-C-0044]
- DARPA [W911NF-13-1-0196]
- AFOSR [FA9550-14-1-0196]
- EPSCoR
- Office Of The Director [1003970] Funding Source: National Science Foundation
Temperature-dependent photoluminescence (PL) study has been conducted in Ge1-xSnx films with Sn compositions of 0.9%, 3.2%, and 6.0% grown on Si. The competing between the direct and indirect bandgap transitions was clearly observed. The relative peak intensity of direct transition with respect to the indirect transition increases with an increase in temperature, indicating the direct transition dominates the PL at high temperature. Furthermore, as Sn composition increases, a progressive enhancement of direct transition was observed due to the reduction of direct-indirect valley separation, which experimentally confirms that the Ge1-xSnx could become the group IV-based direct bandgap material grown on Si by increasing the Sn content. (C) 2014 AIP Publishing LLC.
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