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注意：仅列出部分参考文献，下载原文获取全部文献信息。High performance photodiodes based on InAs/InAsSb type-II superlattices for very long wavelength infrared detection
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Significantly improved minority carrier lifetime observed in a long-wavelength infrared III-V type-II superlattice comprised of InAs/InAsSb
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Carrier lifetime measurements in short-period InAs/GaSb strained-layer superlattice structures
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Band edge tunability of M-structure for heterojunction design in Sb based type II superlattice photodiodes
Binh-Minh Nguyen et al.
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Molecular beam epitaxy growth of antimonide type-II W high-power interband cascade lasers and long-wavelength infrared photodiodes
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High differential resistance type-II InAs/GaSb superlattice photodiodes for the long-wavelength infrared
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