期刊
SOLID-STATE ELECTRONICS
卷 48, 期 9, 页码 1667-1672出版社
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.sse.2004.02.022
关键词
GaSb; ohmic contact; InGaSb
A Pd/In/Pd/Pt/Au ohmic contact to n-GaSb is presented with a specific contact resistance of 2.4 x 10(-6) Omega cm(2). The annealing temperature range over which the specific contact resistance drops to a minimum, while maintaining a suitable surface morphology, is at least twice that of previously reported ohmic contacts to n-GaSb. Materials characterization using cross-sectional transmission electron microscopy confirms that GaxIn1-xSb forms at the metal/semiconductor interface, and its formation is believed to be responsible for ohmic behavior. (C) 2004 Elsevier Ltd. All rights reserved.
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