4.6 Article

Direct integration of a supercapacitor into the backside of a silicon photovoltaic device

期刊

APPLIED PHYSICS LETTERS
卷 104, 期 21, 页码 -

出版社

AMER INST PHYSICS
DOI: 10.1063/1.4880211

关键词

-

资金

  1. National Science Foundation [CMMI 1334269]
  2. NSF [EPS 1004083]
  3. Directorate For Engineering
  4. Div Of Civil, Mechanical, & Manufact Inn [1334269] Funding Source: National Science Foundation

向作者/读者索取更多资源

We demonstrate a route to integrate active material for energy storage directly into a silicon photovoltaic (PV) device, and the synergistic operation of the PV and storage systems for load leveling. Porous silicon supercapacitors with 84% Coulombic efficiency are etched directly into the excess absorbing layer material in a commercially available polycrystalline silicon PV device and coupled with solid-state polymer electrolytes. Our work demonstrates the simple idea both that the PV device can charge the supercapacitor under an external load and that a constant current load can be maintained through periods of intermittent illumination, demonstrating the concept of an all-silicon integrated solar supercapacitor. (C) 2014 AIP Publishing LLC.

作者

我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。

评论

主要评分

4.6
评分不足

次要评分

新颖性
-
重要性
-
科学严谨性
-
评价这篇论文

推荐

暂无数据
暂无数据