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A. S. Rodin et al.
PHYSICAL REVIEW LETTERS (2014)
Plasmons and Screening in Monolayer and Multilayer Black Phosphorus
Tony Low et al.
PHYSICAL REVIEW LETTERS (2014)
High-mobility transport anisotropy and linear dichroism in few-layer black phosphorus
Jingsi Qiao et al.
NATURE COMMUNICATIONS (2014)
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Fengnian Xia et al.
NATURE COMMUNICATIONS (2014)
Single-layer MoS2 transistors
B. Radisavljevic et al.
NATURE NANOTECHNOLOGY (2011)
Modeling of nanoscale devices
M. P. Anantram et al.
PROCEEDINGS OF THE IEEE (2008)
Generalized effective-mass approach for n-type metal-oxide-semiconductor field-effect transistors on arbitrarily oriented wafers
A Rahman et al.
JOURNAL OF APPLIED PHYSICS (2005)
A numerical study of scaling issues for Schottky-Barrier carbon nanotube transistors
J Guo et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2004)
A computational study of thin-body, double-gate, Schottky barrier MOSFETs
J Guo et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2002)
Simulating quantum transport in nanoscale transistors: Real versus mode-space approaches
R Venugopal et al.
JOURNAL OF APPLIED PHYSICS (2002)