期刊
APPLIED PHYSICS LETTERS
卷 104, 期 15, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.4871715
关键词
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资金
- Fondazione Cariplo [2011-0368]
- European Union [2011 IPPIA, PCIG09-GA-2011-291844]
- Center for Advanced Soft Electronics under the Global Frontier Research Program of the Ministry of Education Science and Technology (MEST), Korea [2013073183]
- Dongguk University
Ambipolar semiconducting polymers, characterized by both high electron (mu(e)) and hole (mu(h)) mobility, offer the advantage of realizing complex complementary electronic circuits with a single semiconducting layer, deposited by simple coating techniques. However, to achieve complementarity, one of the two conduction paths in transistors has to be suppressed, resulting in unipolar devices. Here, we adopt charge injection engineering through a specific interlayer in order to tune injection into frontier energy orbitals of a high mobility donor-acceptor co-polymer. Starting from field-effect transistors with Au contacts, showing a p-type unbalanced behaviour with mu(h) = 0.29 cm(2)/V s and mu(e) = 0.001 cm(2)/V s, through the insertion of a caesium salt interlayer with optimized thickness, we obtain an n-type unbalanced transistor with mu(e) = 0.12 cm(2)/V s and mu(h) = 8 x 10(-4) cm(2)/V s. We applied this result to the development of the basic pass-transistor logic building blocks such as inverters, with high gain and good noise margin, and transmission-gates. In addition, we developed and characterized information storage circuits like D-Latches and D-Flip-Flops consisting of 16 transistors, demonstrating both their static and dynamic performances and thus the suitability of this technology for more complex circuits such as display addressing logic. (C) 2014 AIP Publishing LLC.
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