期刊
APPLIED PHYSICS LETTERS
卷 104, 期 23, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.4883257
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资金
- Binghamton University
- Integrated Electronics Engineering Center at the State University of New York at Binghamton
- New York State Foundation for Science, Technology, and Innovation (NYSTAR)
- Royal Society University Research Fellowship scheme
- EPSRC Grant [EP/J017361/1]
- U.S. Department of Energy, Office of Science, Office of Basic Energy Sciences [DE-AC02-98CH10886]
- National Science Foundation [CHE-1230246]
- University of Toledo
- EPSRC [EP/F067496/1] Funding Source: UKRI
- Engineering and Physical Sciences Research Council [EP/F067496/1] Funding Source: researchfish
The origin of the deep subgap states in amorphous indium gallium zinc oxide (a-IGZO), whether intrinsic to the amorphous structure or not, has serious implications for the development of p-type transparent amorphous oxide semiconductors. We report that the deep subgap feature in a-IGZO originates from local variations in the oxygen coordination and not from oxygen vacancies. This is shown by the positive correlation between oxygen composition and subgap intensity as observed with X-ray photoelectron spectroscopy. We also demonstrate that the subgap feature is not intrinsic to the amorphous phase because the deep subgap feature can be removed by low-temperature annealing in a reducing environment. Atomistic calculations of a-IGZO reveal that the subgap state originates from certain oxygen environments associated with the disorder. Specifically, the subgap states originate from oxygen environments with a lower coordination number and/or a larger metal-oxygen separation. (C) 2014 AIP Publishing LLC.
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