4.6 Article

Properties of magnetic tunnel junctions with a MgO/CoFeB/Ta/CoFeB/MgO recording structure down to junction diameter of 11 nm

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APPLIED PHYSICS LETTERS
卷 105, 期 6, 页码 -

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AMER INST PHYSICS
DOI: 10.1063/1.4892924

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  1. IRST program of JSPS, R&D for Next-Generation Information Technology of MEXT
  2. R&D Subsidiary Program for Promotion of Academia-industry Cooperation of METI

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We investigate properties of perpendicular anisotropy magnetic tunnel junctions (MTJs) with a recording structure of MgO/CoFeB/Ta/CoFeB/MgO down to junction diameter (D) of 11 nm from 56 nm. Thermal stability factor (Delta) of MTJ with the structure starts to decrease at D = 30 nm. D dependence of Delta agrees well with that expected from magnetic properties of blanket film taking into account the change in demagnetizing factors of MTJs. Intrinsic critical current (I-C0) reduces with decrease of D in the entire investigated D range. A ratio of D to IC0 shows continuous increase with decrease of D down to 11 nm. (C) 2014 AIP Publishing LLC.

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