期刊
APPLIED PHYSICS LETTERS
卷 104, 期 6, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.4865237
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资金
- Swiss National Science Foundation (SNF) [130181]
- CARIPLO foundation NanoGap project
The excess charge carrier lifetimes in Ge layers grown on Si or germanium-on-insulator are measured by synchrotron based pump-probe transmission spectroscopy. We observe that the lifetimes do not strongly depend on growth parameters and annealing procedure, but on the doping profile. The defect layer at the Ge/Si interface is found to be the main non-radiative recombination channel. Therefore, the longest lifetimes in Ge/Si (2.6 ns) are achieved in sufficiently thick Ge layers with a built-in field, which repels electrons from the Ge/Si interface. Longer lifetimes (5.3 ns) are obtained in overgrown germanium-on-insulator due to the absence of the defective interface. (C) 2014 AIP Publishing LLC.
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