期刊
APPLIED PHYSICS LETTERS
卷 104, 期 9, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.4867260
关键词
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资金
- Japan Society for the Promotion of Science (JSPS) through the Funding Program for World-Leading Innovative R&D on Science and Technology (FIRST Program)
- Council for Science and Technology Policy (CSTP)
- [24760557]
- Grants-in-Aid for Scientific Research [24760557] Funding Source: KAKEN
We have investigated the effects of post-thermal annealing on the resistive switching characteristics of dielectric/ferroelectric composite devices of SrRuO3/LaFeO3/Bi1-delta FeO3/SrRuO3. Annealing of the devices above 85 degrees C enhanced the hysteresis of the current-voltage characteristics, resulting in an increase in the resistive switching ratio. After post-thermal annealing at 200 degrees C, devices with a thicker LaFeO3 layer exhibited a larger resistive switching ratio, and the device-to-device variation in the resistive switching ratio decreased as the LaFeO3-layer thickness was increased. The pulsed-voltage-induced resistive switching characteristics, such as the resistive switching ratio and the switching speed, were also improved by post-thermal annealing. (C) 2014 AIP Publishing LLC.
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