4.6 Article

Optically controlled excitonic transistor

期刊

APPLIED PHYSICS LETTERS
卷 104, 期 9, 页码 -

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AMER INST PHYSICS
DOI: 10.1063/1.4866855

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资金

  1. NSF [0907349]
  2. EU ITN INDEX
  3. strategic MIT-Skoltech development program
  4. Russian Ministry of Education and Science
  5. Intel fellowship
  6. EPSRC
  7. Division Of Materials Research
  8. Direct For Mathematical & Physical Scien [0907349] Funding Source: National Science Foundation

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Optical control of exciton fluxes is realized for indirect excitons in a crossed-ramp excitonic device. The device demonstrates experimental proof of principle for all-optical excitonic transistors with a high ratio between the excitonic signal at the optical drain and the excitonic signal due to the optical gate. The device also demonstrates experimental proof of principle for all-optical excitonic routers. (C) 2014 AIP Publishing LLC.

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