期刊
APPLIED PHYSICS LETTERS
卷 105, 期 18, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.4901533
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资金
- Finnish Funding Agency for Technology and Innovation
- Okmetic Oyj
- SolarWorld Innovations GmbH
- European Research Council under the European Union [307315]
- Finnish Cultural Foundation
- Finnish Society of Electronics Engineers
- Swedish Academy of Engineering Sciences in Finland (STViF)
In addition to boron and oxygen, copper is also known to cause light-induced degradation (LID) in silicon. We have demonstrated previously that LID can be prevented by depositing negative corona charge onto the wafer surfaces. Positively charged interstitial copper ions are proposed to diffuse to the negatively charged surface and consequently empty the bulk of copper. In this study, copper out-diffusion was confirmed by chemical analysis of the near surface region of negatively/positively charged silicon wafer. Furthermore, LID was permanently removed by etching the copperrich surface layer after negative charge deposition. These results demonstrate that (i) copper can be effectively removed from the bulk by negative charge, (ii) under illumination copper forms a recombination active defect in the bulk of the wafer causing severe light induced degradation. (C) 2014 AIP Publishing LLC.
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