期刊
APPLIED PHYSICS LETTERS
卷 105, 期 15, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.4898078
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资金
- Fondazione Cariplo [2011-0331, 2013-0623]
Spin orientation and relaxation of conduction band electrons in bulk Ge are addressed by studying the steady-state circular polarization of the indirect gap photoluminescence (PL) at low temperatures. This provides a direct experimental proof of recently predicted spin-dependent selection rules for phonon-mediated optical transitions in Ge. In addition, we observe valley-dependent circularly polarized emission, and map the concomitant redistribution of electron spins within the multi-valley conduction band of Ge by gaining simultaneous access to the circular dichroism of light emitted across the direct and the indirect gap transitions. Finally, the lifetime of L-valley electrons is measured by means of decay curves of the indirect gap PL emission, yielding spin relaxation times in the order of hundreds of ns. (C) 2014 AIP Publishing LLC.
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