期刊
APPLIED PHYSICS LETTERS
卷 105, 期 17, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.4900865
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资金
- Scottish Universities Physics Alliance
- China Scholarship Council
- Overseas Research Students Awards Scheme
- University of Strathclyde
- Engineering and Physical Sciences Research Council [EP/K00042X/1]
- EPSRC [EP/K00042X/1] Funding Source: UKRI
- Engineering and Physical Sciences Research Council [EP/K00042X/1, 1097351] Funding Source: researchfish
Temperature-dependent trends in radiative and Auger recombination coefficients have been determined at different injection carrier concentrations using InGaN micro-light emitting diodes 40 mu m in diameter. The differential lifetime was obtained first from the measured modulation bandwidth and was then employed to calculate the carrier concentration in the quantum well active region. When the temperature increases, the carrier concentration increases, but both the radiative and Auger recombination coefficients decrease. In addition, the temperature dependence of radiative and Auger recombination coefficients is weaker at a higher injection carrier concentration, which is strongly related to phase space filling. (C) 2014 AIP Publishing LLC.
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