期刊
APPLIED PHYSICS LETTERS
卷 104, 期 10, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.4868648
关键词
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资金
- MINCYT/DAAD [DA/11/14]
- MINCYT-BMBF [AL/11/05]
- FONCyT [PICT 2010-0400]
- CIUNT [26/E419, 26/E439]
- [SFB 762]
To neutralise the influence of the surface of ZnO nanowires for photonics and optoelectronic applications, we have covered them with insulating MgO film and individually contacted them for electrical characterisation. We show that such a metal-insulator-semiconductor-type nanodevice exhibits a high diode ideality factor of 3.4 below 1V. MgO shell passivates ZnO surface states and provides confining barriers to electrons and holes within the ZnO core, favouring excitonic ultraviolet radiative recombination, while suppressing defect-related luminescence in the visible and improving electrical conductivity. The results indicate the potential use of ZnO/MgO nanowires as a convenient building block for nano-optoelectronic devices. (C) 2014 AIP Publishing LLC.
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